JPH0581051B2 - - Google Patents

Info

Publication number
JPH0581051B2
JPH0581051B2 JP61135353A JP13535386A JPH0581051B2 JP H0581051 B2 JPH0581051 B2 JP H0581051B2 JP 61135353 A JP61135353 A JP 61135353A JP 13535386 A JP13535386 A JP 13535386A JP H0581051 B2 JPH0581051 B2 JP H0581051B2
Authority
JP
Japan
Prior art keywords
film
electrode
region
polycrystalline silicon
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61135353A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62291176A (ja
Inventor
Hideo Honma
Yutaka Misawa
Naohiro Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61135353A priority Critical patent/JPS62291176A/ja
Publication of JPS62291176A publication Critical patent/JPS62291176A/ja
Publication of JPH0581051B2 publication Critical patent/JPH0581051B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP61135353A 1986-06-11 1986-06-11 半導体装置の製造方法 Granted JPS62291176A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61135353A JPS62291176A (ja) 1986-06-11 1986-06-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61135353A JPS62291176A (ja) 1986-06-11 1986-06-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62291176A JPS62291176A (ja) 1987-12-17
JPH0581051B2 true JPH0581051B2 (en]) 1993-11-11

Family

ID=15149769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61135353A Granted JPS62291176A (ja) 1986-06-11 1986-06-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS62291176A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528926B2 (ja) * 1988-02-24 1996-08-28 株式会社日立製作所 半導体装置およびその製造方法
JPH0541517A (ja) * 1991-01-21 1993-02-19 Mitsubishi Electric Corp Ｍｏｓ型電界効果トランジスタを含む半導体装置およびその製造方法
KR950008257B1 (ko) * 1992-12-02 1995-07-26 현대전자산업주식회사 모스(mos) 트랜지스터 및 그 제조방법
JPH06333944A (ja) * 1993-05-25 1994-12-02 Nippondenso Co Ltd 半導体装置
US6214658B1 (en) 1996-12-09 2001-04-10 Texas Instruments Incorporated Self-aligned contact structure and method
KR100332106B1 (ko) * 1999-06-29 2002-04-10 박종섭 반도체 소자의 트랜지스터 제조 방법
JP2011254060A (ja) * 2010-06-04 2011-12-15 Sharp Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139678A (ja) * 1984-01-17 1984-08-10 Hitachi Ltd 半導体装置
JPS6113668A (ja) * 1984-06-29 1986-01-21 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
JPS62291176A (ja) 1987-12-17

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